The short-channel threshold voltage model for junctionless surrounding-gate MOSFETs

Based on the quasi-2D scaling equation, a new threshold voltage model for short-channel junctionless cylindrical, surrounding-gate (JLCSG) MOSFETs is developed. The model explicitly shows how the device parameters of the silicon thickness, oxide thickness, drain bias, and channel length affect the threshold voltage behavior. The model can also be extendable to its counterpart of junction-based cylindrical, surrounding-gate (JBCSG) MOSFETs. The model is velidated by the 3D numerical simulator and can be easily used to explore the threshold voltage characteristics of junctionless cylindrical, surrounding-gate MOSFETs for its simple formula and computational efficiency.