Possibilities of HfO2 for Double-Pole Four-Throw Double-Gate RF CMOS switch

In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO
2
) in place of Silicon-dioxide (SiO
2
). The performance of HfO
2
for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights and working efficiency at high temperature has been discussed. The results for the analysis of this DP4T DG RF CMOS switch with HfO
2
includes the basics of the circuit elements required as integrated circuits for the radio frequency communication systems.