The Impact of Base Current or Voltage Biasing On Characterization and Modeling of HBTs

The impact of base current or voltage biasing on HBT device characterization and modeling is explored experimentally for an InGaP/GaAs on wafer (1.6times30 um) device. The important influences of the measurements with base voltage source are identified by showing the model performances of the device. The HBTs were modeled with several advance HBT models, and a Curtice modified Gummel is used for the electro-thermal modeling examples shown herein.