Development of a New Physics-Based RF Model for AlGaN/GaN HFETs

A physics-based analytic model is built based on the discovery of a new zone in AlGaN/GaN HFETs that is observed in 2D device simulations, especially at high drain bias. The zone is located in the drain access region and is named the "charge deficit zone" after its particular property of a partially filled quantum well. This zone plays an important role when the HFET is under high drain bias because most of the drain voltage is dropped across it and a high lateral electric field exists within it. Good agreement is achieved in comparisons between the model and corresponding simulation results from the commercial ATLAS simulator.