Analysis and performances of a new emitter-switching bipolar transistor device suitable for high-voltage applications

This paper deals with the analysis and experimental investigation of a new monolithic cascode, named the emitter-switching bipolar transistor (ESBT), which is suitable for high-voltage medium-frequency applications. The performances of the device are compared with those of a power MOSFET, having equal blocking voltage and equal rated current. The experimental investigation has been carried out in an actual application using a flyback scheme as workbench. The main advantages and drawbacks of the two devices, with special reference to the switching characteristics and the forward voltage, are hence shown, thus providing useful information to the power converter designers looking for a good exploiting of the ESBT. The correlation between the physical structure of the ESBT and its electrical characteristics is explained aiming to understand some interesting features belonging to the device family. Finally, analysis and discussion on the ESBT driving requirements are done, while several circuit topologies, which are devoted to energize the four-terminal device, are proposed.