Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric

Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.