Nonvolatile-Memory Characteristics of $hbox{AlO}^{-}$ -Implanted $hbox{Al}_{2}hbox{O}_{3}$
Kim, M.C.; Sung Kim; Suk-Ho Choi; Belay, K.; Elliman, R.G.; Russo, S.P.
Electron Device Letters, IEEE
Volume 30, Issue 8, Aug. 2009 Page(s):837 - 839
Digital Object Identifier   10.1109/LED.2009.2024440
Summary:The nonvolatile-memory (NVM) characteristics of AlO^- -implanted Al₂O₃ structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al₂O₃, and our calculations show that these levels are likely attributed to the defects in the Al₂O₃, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

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