Compact Models for the I-V Characteristics of Double Gate and Surround Gate MOSFETs
Morris, H.; Cumberbatch, E.; Abebe, H.; Tyree, V.
University/Government/Industry Microelectronics Symposium, 2006 16th Biennial
Volume , Issue , 25-28 June 2006 Page(s):119 - 123
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Summary:The models presented by Lu and Taur, for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function. These solutions are shown to be accurate compared with exact numerical solutions.

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