A New Method to Extract Bulk Carrier Mobility in Germanium-on-Insulator
Hai-Yan Jin; Cheung, N.W.
Electron Devices, IEEE Transactions on
Volume 55, Issue 5, May 2008 Page(s):1250 - 1254
Digital Object Identifier   10.1109/TED.2008.919301
Summary:A new method is presented to extract bulk carrier mobility of germanium-on-insulator (GeOI) films based on the data from the depletion mode of four-point probe pseudo-MOSFET measurement. Analytical models of the conductance in depletion region and related parameter extraction procedures are presented. This method is validated with both GeOI and silicon-on-insulator substrates prepared by layer transfer.

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