Effects of output harmonic termination on PAE and output power of AlGaN/GaN HEMT power amplifier
Chung, Y.; Hang, C.Y.; Cai, S.; Chen, Y.; Lee, W.; Wen, C.P.; Wang, K.L.; Itoh, T.
Microwave and Wireless Components Letters, IEEE
Volume 12, Issue 11, Nov 2002 Page(s): 421 - 423
Digital Object Identifier 10.1109/LMWC.2002.805532
Summary:The authors experimentally investigate and discuss the effects of output harmonic termination on power added efficiency (PAE) and output power of an AlGaN/GaN high electron mobility transistor (HEMT) power amplifier (PA). The AlGaN/GaN HEMT PA with gate periphery of 1 mm was built and tested at L-band. Large-signal measurements and comparisons of the PAE and output power were carried out at different DC bias conditions from 50% of saturated drain current (Idss) to 1% of Id., for the PA with and without output harmonic termination. For class-AB operation at 25% of Idss, an increase of about 10% in peak PAE and 1 dBm in output power were observed in saturated output power range. Improvements of up to 9% in PAE and 1.2 dBm in output power were achieved over the measured DC bias conditions provided the output harmonics are properly terminated.
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