Small signal RF performance of AlGaN/GaN heterojunction bipolartransistors
McCarthy, L.S.; Smorchkova, I.P.; Fini, P.; Rodwell, M.J.W.; Speck, I.; DenBaars, S.P.; Mishra, U.K.
Electronics Letters
Volume 38, Issue 3, 31 Jan 2002 Page(s):144 - 145
Digital Object Identifier   10.1049/el:20020101
Summary:Small signal RF characteristics of an AlGaN/GaN HBT are presented. The devices had a short circuit current gain cutoff frequency of 2 GHz. The roll off of the short-circuit current gain (H₂₁) of the device was less than 20 dB/decade. We propose that this is due to the distributed nature of the base-collector parasitic resistance-capacitance network caused by a high sheet resistance in the base (100 kΩ/□) and high base contact resistances. Finite element small signal equivalent circuit simulations support this explanation

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