Very-high power density AlGaN/GaN HEMTs
Yi-Feng Wu; Kapolnek, D.; Ibbetson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K.
Electron Devices, IEEE Transactions on
Volume 48, Issue 3, Mar 2001 Page(s):586 - 590
Digital Object Identifier   10.1109/16.906455
Summary:Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 μm wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE. A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date

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