High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes
Pulfrey, D.L.; Kuek, J.J.; Leslie, M.P.; Nener, B.D.; Parish, G.; Mishra, U.K.; Kozodoy, P.; Tarsa, E.J.
Electron Devices, IEEE Transactions on
Volume 48, Issue 3, Mar 2001 Page(s):486 - 489
Digital Object Identifier   10.1109/16.906440
Summary:The solar-blind detection capability of heterostructure diodes employing an i-Al_0.33Ga_0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al_0.33Ge_0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude

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