Current instabilities in GaN-based devices
Daumiller, I.; Theron, D.; Gaquiere, C.; Vescan, A.; Dietrich, R.; Wieszt, A.; Leier, H.; Vetury, R.; Mishra, U.K.; Smorchkova, I.P.; Keller, S.; Nguyen, C.; Kohn, E.
Electron Device Letters, IEEE
Volume 22, Issue 2, Feb 2001 Page(s):62 - 64
Digital Object Identifier   10.1109/55.902832
Summary:Current dispersion effects have been experimentally investigated in a variety of AlGaN/GaN heterostructure FETs with large signal and switching measurements including HEMTs with doped and undoped barrier layer. A range of dispersion frequencies from 10^-3 Hz to 10 GHz were observed, where the output current amplitude is drastically reduced. Through this effect the full channel charge of an AlGaN/GaN heterostructure FET may be completely depleted under specific bias conditions. This indicates that this phenomena cannot be related to deep traps alone, but is also connected to piezorelated charge states and conduction to these states

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