Measurement of effective drift velocities of electrons and holes inshallow multiple-quantum-well p-i-n modulators
Ching-Mei Yang; Canoglu, E.; Garmire, E.; Goossen, K.W.; Cunningham, J.E.; Jan, W.Y.
Quantum Electronics, IEEE Journal of
Volume 33, Issue 9, Sep 1997 Page(s):1498 - 1506
Digital Object Identifier 10.1109/3.622629
Summary:We present results on carrier transport in shallow
multiple-quantum-well GaAs-AlxGa1-xAs p-i-n diodes
(x=0.02, 0.04, 0.08) at various bias voltages. We show that only carrier
drift and enhanced diffusion dominate response times of these devices.
We also emphasize that the drift of holes plays different roles in
determining the response times: at low bias, the slow drift of holes
adds to enhanced diffusion, slowing down the decay-times; at high bias,
the drift time of holes can be comparable to the time of electrons and
contribute to the rise-times. From picosecond time-resolved pump/probe
electroabsorption measurements, we obtain the drift times, effective
drift velocities, and effective mobilities of electrons and holes. The
effective drift velocities (especially for holes) appear rather
insensitive to the Al concentration in the barriers
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