15 μm solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8μm CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter
Woodward, T.K.; Krishnamoorthy, A.V.; Goossen, K.W.; Walker, J.A.; Lentine, A.L.; Novotny, R.A.; Dapos;Asaro, L.A.; Chirovsky, L.M.F.; Hui, S.P.; Tseng, B.; Kossives, D.; Dahringer, D.; Leibenguth, R.E.; Cunningham, J.E.; Jan, W.Y.; Miller, D.A.B.
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Volume , Issue , Feb 1996 Page(s):406 - 407, 482
Digital Object Identifier   10.1109/ISSCC.1996.488737
Summary:A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 μm², and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attaching GaAs/AlGaAs multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with flip-chip solder bonding. The main unique features are summarized

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