Thermal annealing in hydrogen for 3-D profile transformation on silicon-on-insulator and sidewall roughness reduction
Lee, M.-C.M.; Wu, M.C.
Microelectromechanical Systems, Journal of
Volume 15, Issue 2, April 2006 Page(s): 338 - 343
Digital Object Identifier   10.1109/JMEMS.2005.859092
Summary:A fast, effective process using hydrogen annealing is introduced to perform profile transformation on silicon-on-insulator (SOI) and to reduce sidewall roughness on silicon surfaces. By controlling the dimensions of as-etched structures, microspheres with 1 μm radii, submicron wires with 0.5 μm radii, and a microdisk toroid with 0.2 μm toroidal radius have been successfully demonstrated on SOI substrates. Utilizing this technique, we also observe the root-mean-square (rms) sidewall roughness dramatically reduced from 20 to 0.26 nm. A theoretical model is presented to analyze the profile transformation, and experimental results show this process can be engineered by several parameters including temperature, pressure, and time.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.