Micron and submicron Nb/Al-AlO_x/Nb tunnel junctions withhigh critical current densities
Xiaofan Meng; Zheng, L.; Wong, A.; Van Duzer, T.
Applied Superconductivity, IEEE Transactions on
Volume 11, Issue 1, Mar 2001 Page(s):365 - 368
Digital Object Identifier   10.1109/77.919358
Summary:To increase superconducting IC speed and density, it is necessary to reduce junction size and increase critical current density. We describe the fabrication and properties of high critical current density micron and submicron Nb/Al-AlO_x/Nb tunnel junctions. Using a 10:1 reduction wafer stepper with I-line photoresist, we obtained a minimum linewidth of 0.6 μm and junctions as small as 0.3 μm² . The critical current densities can be as high as 20 kA/cm² still with low subgap currents. The measured critical current spreads are small. This is due to the use of low-temperature, low-stress ECR (Electron Cyclotron Resonance)-based PECVD (Plasma Enhanced Chemical Vapor Deposition) SiO₂ insulation layers and light anodization around junction areas. The junctions have potential applications in very high-speed superconducting digital circuits and submillimeter microwave devices

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.