A C-band high-dynamic range GaN HEMT low-noise amplifier
Hongtao Xu; Sanabria, C.; Chini, A.; Keller, S.; Mishra, U.K.; York, R.A.
Microwave and Wireless Components Letters, IEEE
Volume 14, Issue 6, June 2004 Page(s): 262 - 264
Digital Object Identifier   10.1109/LMWC.2004.828020
Summary: A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.