High-linearity class B power amplifiers in GaN HEMT technology
Shouxuan Xie; Paidi, V.; Coffie, R.; Keller, S.; Heikman, S.; Moran, B.; Chini, A.; DenBaars, S.P.; Mishra, U.; Long, S.; Rodwell, M.J.W.
Microwave and Wireless Components Letters, IEEE
Volume 13, Issue 7, July 2003 Page(s): 284 - 286
Digital Object Identifier   10.1109/LMWC.2003.811682
Summary: A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that class B power amplifiers can achieve IM3 suppression comparable to class A, while providing approximately 10% improved power added efficiency.

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