Complementary silicide source/drain thin-body MOSFETs for the 20 nmgate length regime
Kedzierski, J.; Xuan, P.; Anderson, E.H.; Bokor, J.; Tsu-Jae King; Chenming Hu
Electron Devices Meeting, 2000. IEDM Technical Digest. International
Volume , Issue , 2000 Page(s):57 - 60
Digital Object Identifier   10.1109/IEDM.2000.904258
Summary:Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15 nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with T_ox=40 Å show PMOS |I_dsat|=270 μA/μm and NMOS |I_dsat|=190 μA/μm with V_ds=1.5 V, |V_g-V_t|=1.2 V and, I_on/I_off>10⁴. A simple transmission model, fitted to experimental data, is used to investigate effects of oxide scaling and extension doping

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