Comprehensive heat exchange model for a semiconductor laser diode
K.P. Pipe; R.J. Ram
Photonics Technology Letters, IEEE
Volume 15, Issue 4, April 2003 Page(s):504 - 506
Digital Object Identifier   10.1109/LPT.2003.809308
Summary:By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.

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