Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs
Chini, A.; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 25, Issue 5, May 2004 Page(s): 229 - 231
Digital Object Identifier   10.1109/LED.2004.826525
Summary:Record power density and high-efficiency operation with AlGaN-GaN high-electron mobility transistor (HEMT) devices have been achieved by adopting a field-plated gate-recessed structure. Devices grown on SiC substrate yielded very high power density (18.8 W/mm with 43% power-added efficiency (PAE) as well as high efficiency (74% with 6 W/mm) under single-tone continuous-wave testing at 4 GHz. Devices also showed excellent linearity characteristics when measured under two-tone continuous-wave signals at 4 GHz. When biased in deep-class AB (33 mA/mm, 3% I_max) device maintained a carrier to third-order intermodulation ratio of 30 dBc up to a power level of 2.4 W/mm with 53% PAE; increasing bias current to 66 mA/mm (6% I_max) allowed high linear operation (45 dBc) up to a power level of 1.4 W/mm with 38% PAE.

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