High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
Huili Xing; Dora, Y.; Chini, A.; Heikman, S.; Keller, S.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 25, Issue 4, April 2004 Page(s): 161 - 163
Digital Object Identifier   10.1109/LED.2004.824845
Summary:High-voltage Al_0.22Ga_0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. With two field plates, the device showed a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.

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