30-W/mm GaN HEMTs by field plate optimization
Wu, Y.-F.; Saxler, A.; Moore, M.; Smith, R.P.; Sheppard, S.; Chavarkar, P.M.; Wisleder, T.; Mishra, U.K.; Parikh, P.
Electron Device Letters, IEEE
Volume 25, Issue 3, March 2004 Page(s): 117 - 119
Digital Object Identifier   10.1109/LED.2003.822667
Summary:GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages. When biased at 120 V, a continuous wave output power density of 32.2 W/mm and power-added efficiency (PAE) of 54.8% at 4 GHz were obtained using devices with dimensions of 0.55×246 μm² and a field-plate length of 1.1 μm. Devices with a shorter field plate of 0.9 μm also generated 30.6 W/mm with 49.6% PAE at 8 GHz. Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs.

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