Integration of Ba_xSr_1-xTiO₃ thin films with AlGaN/GaN HEMT circuits
Hongtao Xu; Pervez, N.K.; Hansen, P.J.; Shen, L.; Keller, S.; Mishra, U.K.; York, R.A.
Electron Device Letters, IEEE
Volume 25, Issue 2, Feb. 2004 Page(s): 49 - 51
Digital Object Identifier   10.1109/LED.2003.822672
Summary:Ba_xSr_1-xTiO₃ (BST) thin films have large dielectric constants that can be varied by as much as a factor of 3 with an applied field, making them attractive for radio frequency (RF) circuits as small-area ac bypass/dc blocking capacitors, or high-power varactors. However, BST must be deposited at relatively high temperatures in an oxidizing environment, presenting significant integration challenges for MMIC applications. This letter describes the successful integration of BST films on AlGaN/GaN high electron-mobility transistor (HEMT) monolithic microwave integrated circuits on sapphire substrates. A sacrificial SiO₂ buffer layer is used to protect the underlying AlGaN during the RF magnetron sputtering of the BST film at an elevated temperature, with a carefully controlled heater ramp rate to avoid degradation of the ohmic contacts on the HEMT.

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