Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs
Huili Xing; Chavarkar, P.M.; Keller, S.; DenBaars, S.P.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 24, Issue 3, March 2003 Page(s): 141 - 143
Digital Object Identifier   10.1109/LED.2003.811400
Summary:N-p-n Al_0.05GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 μm n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of ∼18 at an average collector current density of up to 1 kA/cm² at room temperature.

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