Explanation of anomalously high current gain observed in GaN based bipolar transistors
Xing, H.; Jena, D.; Rodwell, M.J.W.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 24, Issue 1, Jan 2003 Page(s): 4 - 6
Digital Object Identifier   10.1109/LED.2002.807023
Summary:The potential applications of GaN-based bipolar transistors have suffered a setback from poor ohmic contacts and leakage currents. We show in this work that the extrinsic current gain β_EXT measured at a low current level can be erroneously attributed to the gain of the intrinsic transistor. By accounting for leakage current coupled with poor ohmic contacts, we show that the observed very high β_EXT at low current levels can be modeled accurately. The real gain of the intrinsic transistor β_INT is generally much lower. As the current is increased, the effect of leakage currents is diminished, and β_EXT→β_INT. This model is satisfactorily applied to explain our experimental results.

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