Oxidation control of GaAs pHEMTs for high efficiency applications
Can Zheng; Coffie, R.; Buttari, D.; Champlain, J.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 23, Issue 7, Jul 2002 Page(s):380 - 382
Digital Object Identifier   10.1109/LED.2002.1015203
Summary:In this letter, for the first time, an investigation of partially oxidized GaAs-on-insulator (GOI) AlGaAs/InGaAs/GaAs pseudomorphic HEMTs is reported. Fully oxidized pHEMTs demonstrated minimized substrate leakage current and high output impedance, but suffered from 30~40% charge loss. Fully oxidized devices also showed transconductance peaking that could be removed by controlled partial oxidation. Partially oxidized pHEMT devices showed improved power added efficiencies (PAEs) at a low supply voltage of 3.0 V compared to fully oxidized or unoxidized devices and negligible charge loss (<10%)

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