Effect of p-doped overlayer thickness on RF-dispersion in GaNjunction FETs
Jimnez, A.; Buttari, D.; Jena, D.; Coffie, R.; Heikman, S.; Zhang, N.Q.; Shen, L.; Calleja, E.; Munoz, E.; Speck, J.; Mishra, U.K.
Electron Device Letters, IEEE
Volume 23, Issue 6, Jun 2002 Page(s):306 - 308
Digital Object Identifier   10.1109/LED.2002.1004217
Summary:Successive reactive ion etchings (RIE) were performed on the access regions of p⁺-n GaN JFETs. A decrease in the n-layer sheet resistance, with a consequent increase in I_DSS was detected after complete removal of the p-layer, due to a reduction in the n-layer depletion region. An increase in RF-dispersion was experienced, as a result of the progressive reduction of screening from surface-states originally provided by the overlying p-cap layer. No dispersion was detected before cap removal. A continuous increase in f _t and f_max was detected even before complete removal of the p-layer, due to virtual gate length reduction. It is expected that an optimized p-doped overlayer will provide current slump suppression without degradation in cutoff frequency or breakdown

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