Load impedance influence on the I_D(Y_DS)characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz
Vellas, N.; Gaquiere, C.; Bue, F.; Guhel, Y.; Boudart, B.; de Jaeger, J.C.; Poisson, M.A.
Electron Device Letters, IEEE
Volume 23, Issue 5, May 2002 Page(s):246 - 248
Digital Object Identifier   10.1109/55.998865
Summary:A measurement system allowing one to put in evidence the trap effects on the power performance of Al_0.1Ga_0.9N/GaN high electron mobility transistors (HEMTs) made on sapphire substrate is presented in this paper. This setup permits simultaneous measurements of the output power supplied by the device under test (DUT) and the I_D(V_DS) characteristic in large signal regime at 4 GHz for different load impedances. It shows the traps influence on the maximum drain-current at 4 GHz for different load impedances under large signal operating conditions. The measurements carried out on a device (2×50×1 μm²) have shown a linear decrease of the maximum drain-current when the load impedance increases. These observations make it possible to determine the origin of the power performances difference obtained at microwave frequencies opposite to the static regime

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