A Ka-band avalanche-diode up-converter

Operation of a silicon avalanche-diode up-converter with output frequency at 35 GHz is reported. This was done by superimposing the input signal on the dc bias while providing the diode with the LO signal. Up-conversion was achieved with about 0-dB conversion loss and output power up to 200 mW. The influence of dc bias and input frequency level is considered; the bandwidth is also shown.