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Band‐gap narrowing in ordered Ga0.47In0.53As

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Arent, D. J.  Bode, M.  Bertness, K. A.  Kurtz, Sarah R.  Olson, J. M. 
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401‐3393 

This paper appears in: Applied Physics Letters
Issue Date: Apr 1993
Volume: 62 Issue: 15
On page(s): 1806 - 1808
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.109640
Date of Current Version: 18 June 2009

Abstract

We report the first observation of band‐gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt‐type ordering. A reduction of more than 65 meV in the band‐gap energy is observed for lattice‐matched samples that show strong CuPt‐like ordering by transmission electron microscopy. By comparison samples that show no CuPt‐like ordering diffraction signatures, do not have reduced band‐gap energies. Studies of the influence of growth parameters on the band‐gap energy indicate a U‐shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band‐gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.

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