Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction
Hernando, M.M.; Fernandez, A.; Garcia, J.; Lamar, D.G.; Rascon, M.
Industrial Electronics, IEEE Transactions on
Volume 53, Issue 2, April 2006 Page(s): 705 - 707
Digital Object Identifier   10.1109/TIE.2006.870882
Summary: Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.