A three-level MOSFET inverter for low-power drives
Welchko, B.A.; de Rossiter Correa, M.B.; Lipo, T.A.
Industrial Electronics, IEEE Transactions on
Volume 51, Issue 3, June 2004 Page(s): 669 - 674
Digital Object Identifier   10.1109/TIE.2004.825337
Summary: This paper proposes operating a three-level neutral-point-clamped (NPC) inverter using a two-level pulsewidth-modulation method. This allows for the clamping diodes to be rated at a fraction of the main switches due to their low average current requirement. The use of a bootstrap charge pump as a low-cost method to obtain the isolated gate drive power supplies is extended for use with the NPC topology. Using this control method and circuits, an inverter based on high-volume, low-cost, low-voltage power MOSFETs is experimentally demonstrated as a possible economic alternative to an insulated-gate-bipolar-transistor-based drive for 120-Vrms-supplied systems.

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