Thermal stability of IGBT high-frequency operation
Sheng, K.; Finney, S.J.; Williams, B.W.
Industrial Electronics, IEEE Transactions on
Volume 47, Issue 1, Feb 2000 Page(s):9 - 16
Digital Object Identifier   10.1109/41.824018
Summary:Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBTs at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits

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