Bandwidth Extension Techniques for CMOS Amplifiers
Shekhar, S.; Walling, J.S.; Allstot, D.J.
Solid-State Circuits, IEEE Journal of
Volume 41, Issue 11, Nov. 2006 Page(s):2424 - 2439
Digital Object Identifier 10.1109/JSSC.2006.883336
Summary:Inductive-peaking-based bandwidth extension techniques for CMOS amplifiers in wireless and wireline applications are presented. To overcome the conventional limits on bandwidth extension ratios, these techniques augment inductive peaking using capacitive splitting and magnetic coupling. It is shown that a critical design constraint for optimum bandwidth extension is the ratio of the drain capacitance of the driver transistor to the load capacitance. This, in turn, recommends the use of different techniques for different capacitance ratios. Prototype wideband amplifiers in 0.18-mum CMOS are presented that achieve a measured bandwidth extension ratio up to 4.1 and simultaneously maintain high gain (>12 dB) in a single stage. Even higher enhancement ratios are shown through the introduction of a modified series-peaking technique combined with staggering techniques. Ultra-wideband low-noise amplifiers in 0.18-mum CMOS are presented that exhibit bandwidth extension ratios up to 4.9
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