High Optical Response in Forward Biased (In,Ga)N–GaN Multiquantum-Well Diodes Under Barrier Illumination
Pau, J.L.; McClintock, R.; Bayram, C.; Minder, K.; Silversmith, D.; Razeghi, M.
Quantum Electronics, IEEE Journal of
Volume 44, Issue 4, April 2008 Page(s):346 - 353
Digital Object Identifier   10.1109/JQE.2007.914766
Summary:The authors report on the current-voltage (I-V) characteristic under forward biases obtained in low leakage, small size p-(In,Ga)N-GaN-n multiquantum well diodes. Under barrier illumination, the devices present a high optical response with capabilities to detect optical powers in the pW range without further amplification. This response is attributed to the screening of the internal electric fields. Recombination times of a few seconds are found to be associated to this mechanism. Moreover, a step-like feature is found in the I-V characteristic before the diode turn-on voltage. Our model proposes tunneling current through the multiquantum-well structure as responsible of this feature. Fast modulation of the tunneling effect under barrier illumination is used to evaluate the detection of low photon fluxes.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.