Normal-incidence, high-temperature, mid-infrared, InAs-GaAsvertical quantum-dot infrared photodetector
Stiff, A.D.; Krishna, S.; Bhattacharya, P.; Kennerly, S.W.
Quantum Electronics, IEEE Journal of
Volume 37, Issue 11, Nov 2001 Page(s):1412 - 1419
Digital Object Identifier   10.1109/3.958360
Summary:The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al_0.3 Ga_0.7As current-blocking barrier are described and discussed in detail. A specific detectivity ≈3×10⁹ cmHz^1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array

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