Toward Silicon-Based Lasers for Terahertz Sources
Lynch, S. A.; Paul, D. J.; Townsend, P.; Matmon , G.; Suet, Z.; Kelsall, R. W.; Ikonic, Z.; Harrison, P.; Zhang, J.; Norris, David J.; Cullis, A. G.; Pidgeon, C. R.; Murzyn, P.; Murdin, B.; Bain, M.; Gamble, H. S.; Zhao, M.; Ni, W.-X.
Selected Topics in Quantum Electronics, IEEE Journal of
Volume 12, Issue 6, Nov.-dec. 2006 Page(s):1570 - 1578
Digital Object Identifier   10.1109/JSTQE.2006.884069
Summary: Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.

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