The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
Xinwen Hu; Choi, B.K.; Barnaby, H.J.; Fleetwood, D.M.; Schrimpf, R.D.; Sungchul Lee; Shojah-Ardalan, S.; Wilkins, R.; Mishra, U.K.; Dettmer, R.W.
Nuclear Science, IEEE Transactions on
Volume 51, Issue 2, April 2004 Page(s): 293 - 297
Digital Object Identifier   10.1109/TNS.2004.825077
Summary:The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 10¹³ cm^-2, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 10¹² cm^-2. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.

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