Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
Xinwen Hu; Karmarkar, A.P.; Bongim Jun; Fleetwood, D.M.; Schrimpf, R.D.; Geil, R.D.; Weller, R.A.; White, B.D.; Bataiev, M.; Brillson, L.J.; Mishra, U.K.
Nuclear Science, IEEE Transactions on
Volume 50, Issue 6, Dec. 2003 Page(s): 1791 - 1796
Digital Object Identifier   10.1109/TNS.2003.820792
Summary:The degradation of AlGaN/AlN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluences up to 3×10¹⁵ cm^-2. The devices have much higher mobility than AlGaN/GaN devices, but they possess similarly high radiation tolerance, exhibiting little degradation at fluences up to 1×10¹⁴ cm^-2. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal are the primary damage mechanisms. The device degradation is observed as a decrease in the maximum transconductance, an increase in the threshold voltage, and a decrease in the drain saturation current.

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