Electronic structure theory and mechanisms of the oxide trappedhole annealing process
Karna, S.P.; Pineda, A.C.; Pugh, R.D.; Shedd, W.M.; Oldham, T.R.
Nuclear Science, IEEE Transactions on
Volume 47, Issue 6, Dec 2000 Page(s):2316 - 2321
Digital Object Identifier   10.1109/23.903771
Summary:First principles quantum mechanical calculations on model SiO₂ clusters support the Lelis model of reverse annealing in the oxide and provide the first electronic structure explanation of the process, suggesting that delocalized holes (E_δ' centers) are annealed out permanently. Localized holes (E_γ ' centers) form a metastable, dipolar complex, without restoring the Si-Si dimer bond upon electron trapping. In the presence of an applied negative field, these charge neutral, dipolar complexes, (E_γ'+e^-), can readily release the weakly bonded electron, exhibiting a reverse annealing process

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