Excess current in p¿n junctions associated with surface states
Esteve, D.
Electronics Letters
Volume 4, Issue 15, July 26 1968 Page(s):305 - 307
Digital Object Identifier   10.1049/el:19680237
Summary:Surface effects are known to cause excess currents in p¿n junctions. A quantitative model is proposed which shows that the essential contribution can be related to surface recombination velocity. An apparent exp (V/mUT) dependence is found for this current component.

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