Room-temperature self-organised In_0.5Ga_0.5As quantum dot laser on silicon
Mi, Z.; Bhattacharya, P.; Yang, J.; Pipe, K.P.
Electronics Letters
Volume 41, Issue 13, 23 June 2005 Page(s): 742 - 744
Digital Object Identifier   10.1049/el:20051558
Summary:The first room-temperature operation of In_0.5Ga_0.5As quantum dot lasers grown directly on Si substrates with a thin (≤2 μm) GaAs buffer layer is reported. The devices are characterised by J_th∼1500 A/cm², output power >50 mW, and large T₀ (244 K) and constant output slope efficiency (≥0.3 W/A) in the temperature range 5-95°C.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.