Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz
Coffie, R.; Shen, L.; Parish, G.; Chini, A.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U.K.
Electronics Letters
Volume 39, Issue 19, 18 Sept. 2003 Page(s): 1419 - 1420
Digital Object Identifier   10.1049/el:20030872
Summary:A novel gate process utilising SiO₂ to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.