2.1 A/mm current density AlGaN/GaN HEMT
Chini, A.; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U.K.
Electronics Letters
Volume 39, Issue 7, 3 April 2003 Page(s): 625 - 626
Digital Object Identifier   10.1049/el:20030382
Summary:The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 × 75 μm × 0.7 μm devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and V_DS=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.

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