AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching
Gao, Y.; Stonas, A.R.; Ben-Yaacov, I.; Mishra, U.; DenBaars, S.P.; Hu, E.L.
Electronics Letters
Volume 39, Issue 1, 9 Jan. 2003 Page(s): 148 - 149
Digital Object Identifier   10.1049/el:20030018
Summary: Photoelectrochemical (PEC) wet etching was used to form the aperture of a novel AlGaN/GaN CAVET current aperture vertical electron transistor (CAVET) device. The PEC etch was optimised to produce a smooth, uniform undercut through the selective removal of the lower bandgap InGaN. The I-V characteristics of the initial devices indicate that modulation and pinch-off of the current can be obtained.

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