High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
Paidi, V.; Shouxuan Xie; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, A.; DenBaars, S.P.; Mishra, U.K.; Long, S.; Rodwell, M.J.W.
Microwave Theory and Techniques, IEEE Transactions on
Volume 51, Issue 2, Feb 2003 Page(s): 643 - 652
Digital Object Identifier   10.1109/TMTT.2002.807682
Summary: A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance.

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