Modeling projection printing of positive photoresists
Dill, F.H.; Neureuther, A.R.; Tuttle, J.A.; Walker, E.J.
Electron Devices, IEEE Transactions on
Volume 22, Issue 7, Jul 1975 Page(s): 456 - 464
Digital Object Identifier  
Summary: The accompanying papers "Optical Lithography" and "Characterization of Positive Photoresist" introduce the concepts of modeling using destruction of the photoactive inhibitor compound to describe exposure and a surface-limited removal rate to describe development together with the optical exposure parameters A, B, and C and a rate relationship, R(M), which characterize the photoresist for modeling purposes. This paper applies the model to, the projection exposure environment: exposure and development of photoresist are treated with a simulation model that allows computation of image surface profiles for positive photoresist exposed with a diffraction limited real image.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.